Characteres electrici
| Gradus | Eff(%) | Pmpp(W) | Vmpp(V) | Impp(A) | Voc(V) | Isc(A) | FF(%) |
| 1 | 23.1 | 6.34 | 0.597 | 10.62 | 0.693 | 11.151 | 82.1 |
| 2 | 23 | 6.31 | 0.596 | 10.6 | 0.692 | 11.132 | 82.01 |
| 3 | 22.9 | 6.28 | 0.595 | 10.58 | 0.691 | 11.112 | 81.98 |
| 4 | 22.8 | 6.25 | 0.594 | 10.55 | 0.69 | 11.097 | 81.84 |
| 5 | 22.7 | 6.22 | 0.593 | 10.52 | 0.689 | 11.077 | 81.74 |
| 6 | 22.6 | 6.2 | 0.592 | 10.49 | 0.688 | 11.056 | 81.64 |
| 7 | 22.5 | 6.17 | 0.591 | 10.46 | 0.687 | 11.036 | 81.54 |
| 8 | 22.4 | 6.14 | 0.59 | 10.42 | 0.686 | 11.021 | 81.32 |
| 9 | 22.3 | 6.11 | 0.589 | 10.4 | 0.685 | 11.001 | 81.29 |
| 10 | 22.2 | 6.09 | 0.588 | 10.37 | 0.684 | 10.981 | 81.18 |
| 11 | 22.1 | 6.07 | 0.587 | 10.34 | 0.683 | 10.96 | 81.08 |
| Sub norma test condicionis: 1000W/㎡，AM1.5, 25℃ Temperatus coefficientes Temperature coefficientes circa intentionem apertam: -0.36%/K Temperatura coefficientium ambitus brevissimi currentis: 0.07%/K Temperatura coefficientium maximae potentiae: -0.38%/K | |||||||
Mechanica characteres
| Dimensio: 166mm×166mm±0.25mm; Cell Crassitudo: 180±20µm |
| Anterius: Silicon oxydatum caeruleum siliconis nitride compositum anti-cogitatio vestiens (PID Free); Busbar latitudo est 0.1±0.05mm; Caput busbar bifurcum; Digitus numerus 128 est; Anterius cellulae solaris designatum ut dimidium linteum |
| Posteriore parte: Passivatus emitter (AIOx et SiNx iacuit dualis) contactum posteriorem; Latitudo et longitudo Ag electrode est 1.1±0.1mm, et numerus aluminii busbarum est 9; Aluminii digiti numerus est 134; |
| Solderability: (Peel vires) ≥1.0N/mm Eventus variari possunt secundum condiciones |
